Publication

Byline

Location

US Patent Issued to Sandisk Technologies on Nov. 3 for "Read in multi-tier non-volatile memory" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,840, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Read in multi-tier non-volatile memory" was invented b... और पढ़ें


US Patent Issued to TDK on Nov. 3 for "Power supply apparatus and memory system" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,841, issued on Nov. 3, was assigned to TDK Corp. (Tokyo). "Power supply apparatus and memory system" was invented by Yugi Ito (Tokyo), Norik... और पढ़ें


US Patent Issued to Intel NDTM US on Nov. 3 for "Nand duty cycle correction for data input write path" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,842, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.). "Nand duty cycle correction for data input write path" was i... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device changing clock frequency according to the number of active blocks and storage device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,843, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device changing clock frequency accordi... और पढ़ें


US Patent Issued to SK hynix on Nov. 3 for "Memory device and method of operating the same using multi-level pass voltages during a program operation" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,844, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the same using multi-l... और पढ़ें


US Patent Issued to SK hynix on Nov. 3 for "Storage device and method for refresh operation by detecting threshold voltage of strings" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,845, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Storage device and method for refresh operation by detecting... और पढ़ें


US Patent Issued to Sandisk Technologies on Nov. 3 for "Coarse/fine programming of non-volatile memory for tighter threshold voltage distributions" (California, Arizona Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,847, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Coarse/fine programming of non-volatile memory for tig... और पढ़ें


US Patent Issued to SK hynix on Nov. 3 for "Semiconductor device and method of operating the semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,849, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device and method of operating the semiconduct... और पढ़ें


US Patent Issued to Sandisk Technologies on Nov. 3 for "Advanced dummy word line ramp down after program verify for memory devices" (California Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,851, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Advanced dummy word line ramp down after program verif... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Nov. 3 for "Memory device and method for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,852, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taip... और पढ़ें